The core advantages of ultrasonic spraying of phenolic resin ethanol solution onto silicon wafer surface are uniform coating thickness, strong controllability, high adhesion, and high raw material utilization. Furthermore, the heat resistance, corrosion resistance, and insulation properties of phenolic resin can complement the semiconductor characteristics and mechanical stability of silicon wafers. It is mainly used in semiconductor manufacturing, microelectronic packaging, new energy devices, sensors, and MEMS.
Application Scenarios
1. Preparation of Insulating/Passivation Layers for Semiconductor Devices
After ultrasonic spraying, phenolic resin ethanol solution can form a dense, pinhole-free thin film on the silicon wafer surface, exhibiting excellent electrical insulation and chemical stability.
2. Buffer/Adhesive Layers for Microelectronic Packaging
With excellent bonding strength and heat resistance, ultrasonically sprayed coatings can serve as a buffer transition layer between the silicon wafer and the packaging shell (such as ceramic or metal), mitigating stress cracking caused by differences in thermal expansion coefficients during packaging.
3. Functional Layers for Silicon-Based New Energy Devices
1) Protective layer for the negative electrode of silicon-based lithium batteries.
2) Anti-reflective/anti-reflective coating for silicon-based solar cells.
Advantages of Shanghai Yangmi Ultrasonic Spraying Technology
● High Coating Uniformity: Ultrasonic spraying produces small and narrowly distributed droplets, controlling coating thickness deviation to within 5%, superior to traditional spin coating and dip coating processes;
● High Raw Material Utilization: Compared to spin coating (raw material utilization rate of approximately 30%), ultrasonic spraying achieves a raw material utilization rate of over 80%, reducing the consumption of phenolic resin ethanol solution;
● Strong Process Compatibility: Ethanol solvent is easily volatile, and the film-forming temperature is low (drying can be achieved at room temperature – 80℃), without damaging the surface structure of the silicon wafer.
